Millimeter Wave Technology in Wireless PAN, LAN, and MAN by Shao-Qiu Xiao, Ming-Tuo Zhou

By Shao-Qiu Xiao, Ming-Tuo Zhou

Pushed by means of the call for for high-data-rate, millimeter wave applied sciences with extensive bandwidth are being explored in high-speed instant communications. those applied sciences contain gigabit instant own zone networks (WPAN), high-speed instant neighborhood quarter networks (WLAN), and high-speed instant metropolitan zone networks (WMAN). due to this technological push, average enterprises are actively calling for standards of millimeter wave purposes within the above instant platforms.

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58 shows the output signal power variation as the RF-to-local-carrier power ratio of the transmitter changes. The receiver IF output power depends on the power distribution between the transmitted local carrier and the RF signals, and the maximum IF output power can occur when the power level of the LO and RF signals are equal [58]. Also, the phase noise characteristics of the IF input signal of the transmitter and the IF output signal of the receiver are obtained. 4, the phase noise characteristics of the IF output signal are degraded by less than 3 dB compared with that of the IF input signal over the entire range of the frequency offset.

These two materials are easily applied to the wafer either by sputtering or by PECVD. Silicon dioxide films have a lower dielectric constant than silicon nitride films, thus making them preferable for a crossover dielectric due to lower crossover capacitance. On the other hand, the higher dielectric constant of silicon nitride makes it preferable for use in capacitor formation. Besides, silicon nitride is less permeable to ions than silicon dioxide and therefore makes the superior encapsulation [22].

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