Advances in Solid State Physics 48 by Rolf Haug

By Rolf Haug

The 2008 Spring assembly of the Arbeitskreis Festkörperphysik was once held in Berlin, Germany, among February 24 and February 29, 2008 together with the 72nd Annual assembly of the Deutsche Physikalische Gesellschaft. The 2008 assembly used to be the biggest physics assembly in Europe and one of the greatest physics conferences on the planet in 2008.

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Chau, S. Datta, A. Majumdar: Opportunities and challenges of iii-v nanoelectronics for future high-speed, low-power logic applications, Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC ’05. IEEE SP-4 pp. –2 Nov. 1531740 3. J. Knoch, W. Riess, J. 917816 4. W. Lu, J. Xiang, B. P. Timko, Y. Wu, C. M. org/cgi/content/abstract/102/29/10046 5. A. Guichard, D. Barsic, S. Sharma, T. Kamins, M. 1021/ nl061287m 6. L. Shi, D. Li, C. Yu, W. Jang, D. Kim, Z. Yao, P. Kim, A. JHR/125/881/1 24 D.

5. ZnO Nanowire field effect transistor. (a) sketch of the microchip layout. Please note in the magnification the bar of photoresist (10 μm) (b) after the thermo cycling, fracture is induced resulting in a zig zag pattern along the photoresist bar. (c) Channel after mask lift of, zig zag nanowires connect two larger contact pads, all obtained from sputtered ZnO. The magnification shows that the wire consists of individual grains which can be less than 20 nm at the position where they touch each other (d) sketch of the field effect transistor setup and current voltage curves with different gate voltages.

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